Elektronički dijelovi : W4NXD8D-S000

Proizvođač : Cree

Pakiranje :

Igle :

Opis : Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Temperatura : Min °C | Maks °C

Datasheet : W4NXD8D-S000 PDF

• W4NXD8D-0000
• W4NXD8D-S000